2008. 10. 10 1/7 semiconductor technical data kf5n50pr/fr/ps/fs n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features ? v dss = 500v, i d = 5.0a ? drain-source on resistance : r ds(on) =1.4 ? @v gs = 10v ? qg(typ) = 12nc ? t rr(typ) = 150ns maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf5n50pr kf5n50ps kf5n50fr kf5n50fs drain-source voltage v dss 500 v gate-source voltage v gss ?? 30 v drain current @t c =25 ? i d 5.0 5.0* a @t c =100 ? 2.9 2.9* pulsed (note1) i dp 13 13* single pulsed avalanche energy (note 2) e as 270 mj repetitive avalanche energy (note 1) e ar 8.6 mj peak diode recovery dv/dt (note 3) dv/dt 20 v/ns drain power dissipation tc=25 ? p d 83 41.5 w derate above 25 ? 0.66 0.33 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.5 3.0 ? /w thermal resistance, junction-to- ambient r thja 62.5 62.5 ? /w g d s g d s pin connection dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 kf5n50pr, kf5n50ps dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 1. gate 2. drain 3. source 10.0 0.3 + _ 15.0 0.3 + _ 2.70 0.3 + _ 3.2 0.2 + _ 3.0 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 2.54 0.1 + _ 6.8 0.1 + _ 4.5 0.2 + _ 2.6 0.2 + _ kf5n50fr, kf5n50fs (kf5n50pr, kf5n50fr) (kf5n50ps, kf5n50fs) www.datasheet.co.kr datasheet pdf - http://www..net/
2008. 10. 10 27 kf5n50pr/fr/ps/fs revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 ? , v gs =0v 500 - - v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 ? , referenced to 25 ? - 0.55 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 ? gate threshold voltage v th v ds =v gs , i d =250 ? 2.0 - 4.0 v gate leakage current i gss kf5n50pr/fr v gs = ?? 30v, v ds =0v - - ?? 100 na kf5n50ps/fs v gs = ?? 25v, v ds =0v - - ?? 10 ? drain-source on resistance r ds(on) v gs =10v, i d =2.5a - 1.15 1.4 ? dynamic total gate charge q g v ds =400v, i d =5a v gs =10v (note4,5) - 12 - nc gate-source charge q gs - 2.4 - gate-drain charge q gd - 5.4 - turn-on delay time t d(on) v dd =250v r l =50 ? r g =25 ? (note4,5) - 22.5 - ns turn-on rise time t r - 29 - turn-off delay time t d(off) - 58 - turn-off fall time t f - 18 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 430 - pf output capacitance c oss - 71 - reverse transfer capacitance c rss - 7.5 - source-drain diode ratings continuous source current i s v gs 2008. 10. 10 37 kf5n50pr/fr/ps/fs revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 3.0 1.0 0 0.5 1.5 2.5 2.0 08 412 6 210 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 2.5a v gs = 0v i ds = 250 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =7v v gs =10v v gs =6v v ds =30v v gs =5v 25 c t c =100 c t c =100 c www.datasheet.co.kr datasheet pdf - http://www..net/
2008. 10. 10 47 kf5n50pr/fr/ps/fs revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 14 16 6 2 10 8 12 4 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area 0 3 1 2 6 5 4 75 150 125 50 100 025 drain current i d (a) (kf5n50pr, kf5n50ps) i d =5a c junction temperature t j ( ) fig11. i d - t j v ds = 100v t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 1 10 100 1000 05 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 t c = 25 t j = 150 single pulse c c dc 10ms 1ms operation in this area is limited by r ds(on) (kf5n50fr, kf5n50fs) 100 s v ds = 400v v ds = 250v 100ms 100ms www.datasheet.co.kr datasheet pdf - http://www..net/
2008. 10. 10 57 kf5n50pr/fr/ps/fs revision no : 0 time (sec) fig12. transient thermal response curve transient thermal resistance time (sec) fig13. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 (kf5n50pr. kf5n50ps) (kf5n50fr. kf5n50fs) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm singl e pulse d uty= 0.5 0.0 2 0.05 0.1 0.2 0.01 duty=0.5 0. 02 0. 05 0 .1 0.2 0.01 singl e pulse www.datasheet.co.kr datasheet pdf - http://www..net/
2008. 10. 10 67 kf5n50pr/fr/ps/fs revision no : 0 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss www.datasheet.co.kr datasheet pdf - http://www..net/
2008. 10. 10 77 kf5n50pr/fr/ps/fs revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss www.datasheet.co.kr datasheet pdf - http://www..net/
|
